Abstract
BackgroundThe ultrasonic transducer is one of the core components of ultrasound systems, and the transducer’s sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems.The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer.MethodsThe equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit.ResultsWe compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers. Therefore, we performed a pulse-echo test using a single element transducer in order to utilize the crossed SMPS MOSFET-based protection circuit in an ultrasound system.ConclusionsThe SMPS-based protection circuit could be a viable alternative that provides better sensitivity, especially for high frequency ultrasound applications.
Highlights
The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer’s sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit
High frequency (>15 MHz) ultrasound systems make it possible to visualize small-size biological structures such as eye, skin, and blood vessel walls due to higher (
In the Methods section, we describe the architecture of the crossed Switching mode power supply (SMPS) MOSFETbased protection circuit and provide its estimated performance
Summary
The returned low voltage echo signals from the transducer and discharged high voltage pulsed signals from the transmitter are transferred to the crossed SMPS MOSFET-based limiter. It was implemented using eight SMPS MOSFETs (E1 ~ E8: IRF5801). The simulation data for the SMPS MOSFET devices operating at high frequency and voltage are not accurate for predicting the behavior of the protection circuits [15,16]. It is reported here merely for the purpose of estimating the performance of the crossed SMPS MOSFET-based expander and limiter. The library of commercial protection circuits is not available from the manufacturer, so the expected data are not provided in this paper
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