Abstract

In-memory computing has gained significant attention due to the potential for dramatic improvement in speed and energy. Redox-based resistive RAMs (ReRAMs), capable of non-volatile storage and logic operations simultaneously have been used for logic-in-memory computing approaches. To this effect, we propose Re RAM based V LIW A rchitecture for in- M emory com P uting (ReVAMP), supported by a detailed device-accurate simulation setup with peripheral circuitry. We present theoretical bounds on the minimum area required for in-memory computation of arbitrary Boolean functions specified using structural representation (And-Inverter Graph and Majority-Inverter Graph) and two-level representation (Exclusive-Sum-of-Product). To support the ReVAMP architecture, we present two technology mapping flows that fully exploit the bit-level parallelism offered by the execution of logic using ReRAM crossbar array. The area-constrained mapping ( ArC ) generates feasible mapping for a variety of crossbar dimensions while the delay-constrained mapping ( DeC ) focuses primarily on minimizing the latency of mapping. We evaluate the proposed mappings against two state-of-the-art technology in-memory computing architectures, PLiM and MAGIC along with their automation flows (SIMPLE and COMPACT). ArC and DeC outperform state-of-the-art PLiM architecture by $1.46\times$ 1 . 46 × and $4.3\times$ 4 . 3 × on average in latency. ArC offers significantly lower area (on average $25.27\times$ 25 . 27 × and $6.57\times$ 6 . 57 × ), while improving the area-delay product by $1.37\times$ 1 . 37 × and $1.12\times$ 1 . 12 × against two mapping approaches for MAGIC respectively. In contrast, DeC achieves average area ( $1.45\times$ 1 . 45 × and $3.06\times$ 3 . 06 × ) and area-delay product ( $1.12\times$ 1 . 12 × and $6.36\times$ 6 . 36 × ) improvements over the mapping approaches for MAGIC architecture respectively. The proposed mapping techniques allow a variety of runtime efficiency trade-offs.

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