Abstract
A time-gated 4×128 Single Photon Avalanche Diode (SPAD) line array with a 512-channel Time-to-digital converter (TDC) has been designed and fabricated in a 0.35 μm high voltage CMOS technology for pulsed Raman spectroscopy. In Raman spectroscopy the SPAD array can be designed as a line array with a high fill factor because electronics can be designed on either side of the SPAD array. In this paper cross talk measurements of the array have been carried out to investigate the probability of the cross talk between adjacent SPADs in an array with high density. Measurements showed a cross talk probability of 0.11% with a pitch of adjacent SPADs of 32 μm. In addition, the largest probability of the cross talk was measured to occur with a short delay.
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