Abstract
The defect structures created in diamond by MeV He ion implantation are studied using Raman microscopy. The diamond was irradiated edge on, and the micro-Raman spectra were collected in a direction perpendicular to the implantation direction. This ‘cross-sectional’ geometry allowed the Raman spectrum of the damage to be resolved as a function of depth from the ion implanted surface. Both the position and the FWHM of the first order Raman mode at 1332 cm −1 were found to scale linearly with dose; a result readily interpretable as defect induced strain in the implanted layer. The measurements thus provide the depth profile of ion implanted damage in MeV irradiated diamond, and allow a direct test of the accuracy of theoretical models, such as TRIM, for the assessment of damage in ion irradiated diamond.
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