Abstract
ABSTRACTMorphological studies of bulk porous-silicon (PS) are presented. Using the atomic force microscope, cleaved cross-sections of electrochemically processed porous-silicon were investigated. The porous-silicon/silicon interface was examined. Using a room temperature UV O3 generator, the porous silicon-samples were oxidized. Oxidation in air was also observed. The morphology of the oxidized porous-silicon is process dependent. AFM contrast was enhanced by selective wet chemical etching. Unusually fast oxide etching in BOE was observed. A possible oxide/PS model is proposed.
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