Abstract
The profile of a negative electron-resist line resulting from a single-scan exposure to an electron beam can provide much fundamental information in high-resolution lithography. A simple experimental method for determining this profile is presented here. The method is based on the measurements of the beam radius in the resist film and the contrast characteristics of the resist. The resist profile is calculated from the incident beam radius and current, the beam radius at the resist–substrate interface, and the resist contrast and exposure threshold. The calculated results are then compared with measurements taken from cross-section scanning electron micrographs of actual resist lines. Good agreement has been obtained in spite of the simplicity of the described method and approximations involved.
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