Abstract
Copper/polyimide (Cu/PI) structures are used extensively for computer packaging applications. For high circuit density multi-chip substrates, a thin film (typically 2-5μm) of polyimide is used; but the polyimide used to interconnect the multi-chip substrates via tape automated bonding (TAB) is typically 50μm thick to protect the tape leads from the cantilever effect. Although many spectroscopic, adhesion and deformation studies have been published about the bonding of metals to thin polyimide, relatively little has been published regarding the use of metal on thick polyimide.One factor limiting the analyses of these interfaces derived from the thick polyimide is the difficulty preparing adequate TEM specimens.Due to the greatly differing ion milling rates of metals and polymers, and the thickness of the two layers, a preparation technique was developed on model tape samples.The model samples consisted of 1μm sputtered Cu on 50μm polyimide, with and without Cr adhesion layers.
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More From: Proceedings, annual meeting, Electron Microscopy Society of America
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