Abstract
The SiCN precursor was prepared by cross-linking process using polysilazane (PSZ) as raw materials. The cross-linking behavior and dielectric properties of SiCN precursor were analyzed. The results indicated that the main reactions during cross-linking process were double bond addition reaction, hydrosilylation reaction, dehydrogenation coupling reaction and transamination reaction. The SiCN precursor was made up of Si-C-N network structure and the main chemical bonds were Si-C, Si-N and C-C. The appropriate cross-linking temperature of SiCN precursor was 600°C. Furthermore, the increasing content and crystallization degree of free carbon could improve the dielectric properties of SiCN precursor.
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