Cross‐Linked Fluorinated Poly(Aryl Ether) (C‐FPAE) Films: Preparation Strategy, Performance Study, and Low Dielectric Applications

Abstract

AbstractThe production of low dielectric materials that can be used in high temperature environments is the primary aim of this work. A cross‐linked structure is introduced into fluorinated poly(aryl ether) (named as FPAE) with high molecular weight (Mw, 140 000 g mol−1) and linear molecular structure using nucleophilic substitution reaction at the ortho‐position of decafluorobiphenyl monomer units in the FPAE molecular chain. The curing temperature and curing time are optimized and the final conditions for the cross‐linking reaction in this study are determined to be 300 °C for 1 h. Moreover, the dielectric constant and dielectric loss of the C‐FPAE film respectively are 2.67 and 0.006 at 1000 Hz when 1 wt% of crosslinking agent is added, and the cross‐linked fluorinated poly(aryl ether) film shows excellent thermal stability (Td(5%), 495 °C), dimensional stability, hydrophobic properties, and high storage modulus in high temperature environments. Such novel low dielectric material with excellent performances has important application value in the aerospace and the integrated electronics field.