Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

Debopriya Dutta,Subhrajit Mukherjee,Michael Uzhansky,Elad Koren

doi:10.1038/s41699-021-00261-w

Debopriya Dutta, Subhrajit Mukherjee + Show 2 more

Open Access

https://doi.org/10.1038/s41699-021-00261-w

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Abstract

The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In2Se3 based field-effect devices. Surface potential measurements of In2Se3 based devices directly reveal the bidirectional dipole locking following high gate voltage pulses. The experimental evidence of hysteretic change in the IP electrical field facilitating a nonvolatile memory switch, was further explored by performing photocurrent measurements. Fabricated photodetectors presented multilevel photocurrent characteristics showing promise for nonvolatile memory and electro-optical applications.

Highlights

Since the successful isolation of graphene[1] and subsequent discovery of its exceptional mechanical, thermal, and electrical properties, substantial research interest has been enthroned on various two-dimensional (2D) materials[2,3] placing them in the forefront of modern science
The traditional ferroelectric materials, e.g., BaTiO310, BiFeO311, and PbTiO312 have been used for decades, the presence of surface dangling bonds, high leakage current in thinner form, and their complex fabrication process limit their potential integration for nanoelectronics
Its predicted[21] stable intercoupled in-plane (IP) and out-of-plane (OOP) ferroelectricity paves the way for controlling the device functionality in nonconventional ways. α-In2Se3 is a III–VI compound semiconductor comprising of five atomic layers of Se-In-Se-In-Se with a direct bandgap of ~1.4 eV22, making it a prime candidate for low-power electronics

Summary

INTRODUCTION

Since the successful isolation of graphene[1] and subsequent discovery of its exceptional mechanical, thermal, and electrical properties, substantial research interest has been enthroned on various two-dimensional (2D) materials[2,3] placing them in the forefront of modern science. The traditional ferroelectric materials, e.g., BaTiO310, BiFeO311, and PbTiO312 have been used for decades, the presence of surface dangling bonds, high leakage current in thinner form, and their complex fabrication process limit their potential integration for nanoelectronics. This emphasizes the need for 2D counterparts that are free from such constraints along with having superior ferroelectric properties to realize sub-10-nm ferroelectric devices, applicable for high-density storage and low power consumption. We demonstrate the cross-field optoelectronic modulation of ferroelectric In2Se3 based FET devices. The presented electronic dipole coupling and its modulation can be utilized to fabricate functional multimodal memory devices based on FET architectures with far-reaching potential for logic, memory, and optoelectronic applications

RESULTS AND DISCUSSIONS

Dutta et al 5

METHODS