Croissance de certains polytypes des phases ternaires semi-conductrices du système zinc-indium-soufre à partir de la phase gazeuse

Abstract

Some new resuts obtained from the investigation of the complex ternary semiconductor phases ZnIn2S4, Zn2 In2 S5 and Zn3 In2 S6 in the phase sections of the ZnSIn2S3 diagram are given and discussed.Single crystals were grown by the method of chemical transport reactions using I2 as a transport carrier.Semi-automatic apparatus for temperature programming was used.It was established that at different temperature gradients various forms grow in the ampoule. In all experiments three-packet polytype forms of the phases ZnIn2S4 and Zn2In2S5 were obtained.The triangular etch pits, pyramids and hexagonal screw of crystal growth which are characteristic of many polytype forms obtained from the gaseous phases were observed on the (0001) planes.Hexagonal bonding between layer-like packets in the cells limits the available number of the polytype forms of the phase in the package of N sulphur atom layers.The mechanism of coalescence of different polytypes during the growth from the gaseous phase may be explained in the same way.Luminescence investigation of the three-packet polytype form and other polytypes coalesced on its surface shows the difference in their properties.An investigation of photoconductivity in polarised and non-polarised light showed a defined anisotropy of physical characteristics of the phases in different crystallographic directions.