Abstract
A new MOS-gated thyristor structure with low on-state voltage drop, known as a channel regulated MOS-gated thyristor (CRMGT) is reported for the first time. The CRMGT uses a thin silicon layer, formed above a buried oxide layer, to control current flow through a four layer thyristor structure. It is demonstrated via simulations that the CRMGT has excellent high voltage current saturation with an FBSOA superior to that of the IGBT.
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