Abstract
In this study, we derive analytical expressions for the critical switching current density induced by spin Hall effect in magnetic structures with the first- and second-order perpendicular magnetic anisotropy. We confirm the validity of the expressions by comparing the analytical results with those obtained from a macrospin simulation. Moreover, we find that for a particular thermal stability parameter, the switching current density can be minimized for a slightly positive second-order perpendicular magnetic anisotropy and the minimum switching current density can further be tuned using an external magnetic field. The analytical expressions are of considerable value in designing high-density magnetic random access memory and cryogenic memory.
Highlights
The strength of the perpendicular magnetic anisotropy (PMA) is an important parameter that affects the performance of spin devices, such as magnetic random access memory (MRAM)[1], magnetic sensors[2,3], and spin torque oscillators[4,5,6,7]
A schematic of the spin Hall effect (SHE)-based device examined in this study is shown in Fig. 1(a), which comprises an NM electrode and an FM nanodot
The NM electrode serves as a switching current path, and the FM nanodot serves as a magnetic free layer
Summary
The strength of the perpendicular magnetic anisotropy (PMA) is an important parameter that affects the performance of spin devices, such as magnetic random access memory (MRAM)[1], magnetic sensors[2,3], and spin torque oscillators[4,5,6,7]. It was demonstrated that in NM/ FM bilayers (NM and FM denote the nonmagnetic and ferromagnetic, respectively), an in-plane current flowing through an NM layer can induce a spin torque acting on the adjacent FM layer, which is sufficient to reverse its magnetization[17,18,19,20,21,22,23]. This spin torque is completely different from the STT generated by an out-of-plane current flowing through the MTJ stack. The analytical expressions are utilized to optimize the SHE-induced Jc and the thermal stability parameter, which are important device parameters related to the power consumption and data duration time, respectively
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