Abstract
We analyze the dependence of the current density and magnetic field switching on the magnetic parameters of the material of the ferromagnetic layers of the spin valve. Comparison of critical characteristics of the spin valve with longitudinal anisotropy of ferromagnetic layers fabricared of different materials showed that the promising materials for the fabrication of spin valve are cobalt, iron, their alloys, ferroborates of cobalt and alloys of cobalt with gadolinium. For these materials we produced and analyzed the bifurcation diagrams of equations describing the switching process of the spin valve. Based on the study of the dynamics of the magnetization vector we obtained the numerical evaluation of time switching.
Highlights
IntroductionThe existing types of memory are approaching dynamical system has the form (see e.g. [3,4,5]): to the limits of their possibilities, and intensive development of new, non-volatile types of memory is observed
The dynamic equation of the magnetization in the free layer of the spin valve in the form of the canonicalCurrently, the existing types of memory are approaching dynamical system has the form: to the limits of their possibilities, and intensive development of new, non-volatile types of memory is observed
For this we have chosen the following materials: 1) ferroborates of cobalt: Fe60Co20B20 which was annealed at the temperature 450o C, and Fe40Co40B20 and Fe70Co30 which were annealed at the temperature 300o C ; 2) alloys of cobalt with gadolinium materials, production of mono-crystal membrans of which has the lowest complexity and is less expensive: cobalt, iron
Summary
The existing types of memory are approaching dynamical system has the form (see e.g. [3,4,5]): to the limits of their possibilities, and intensive development of new, non-volatile types of memory is observed. Field that must be applied to switch the free layer of the spin valve, which is included in a memory cell of MRAM, are too large. The decrease of the switching current can be done in several ways : 1) applying a magnetic field directed opposite to the magnetization of the pinned layer; 2) reducing the thickness of the free layer; 3) choosing the manufacturing material of the free layer of the spin valve, the magnetic properties of which require minimal stability region of point T1(+1, 0, 0). 3. The influence of the magnetic properties of ferromagnetic materials on threshold fields and on switching currents of spin valve. Consider an influence of the magnetic properties of materials constituting the ferromagnetic layers of the spin valve, on the threshold switching current for zero magnetic field Jmin and minimum magnetic switching field Hmin for zero current. Dotted line with two dots), Co80Gd20 (dash–dotted line with three dots); a —in the range H[-2,5; 2] ́106 А and in the m current range
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