Critical study of partial discharge inception in voids: statistical behavior to stochastic nature

Abstract

Although many studies have been done and advanced progress has been made in understanding partial discharge (PD) behavior in the void, this is not the case firinception of PD, especially its stochastic nature. The statistical behaviors of PD inception voltage (PDIV) and inception time delay (PDTD) inside the void were investigated in this study through repeated tests to observe the stochastic nature of PD inception. The results show that the PDIV and PDTD of the void are highly dispersed and obey Weibull and exponential distributions, respectively. The significant dispersion of PDIV can be attributed to the statistical time delay of PD inception. The lengthy inception delay is attributable to a lack of free electrons. The exponential distribution of PDTD indicates that free-electron generation is completely random; further, the stochastic nature of void PD inception is determined by the supply of free electrons. The test method (voltage rise rate, test time, and test time interval), void parameters (size, material, and surface condition), and background radiation determine PD inception by affecting the volume ionization or surface-emission process providing free electrons. Enhanced background ionization or significant increase in test voltage and test time allow for the effective detection of void defects during PD tests. This work contributes to an empirical understanding of the physical process of PD inception in voids and improving existing PD testing technologies.