Critical Laser Fluence Observed in (111) Texture, Grain Size and Mobility of Laser Crystallized Amorphous Silicon

Abstract

This paper describes new results on the relationship between the grain size, mobility, and Si (111) x-ray peak intensity of laser crystallized amorphous silicon as a function of the laser fluence, shot density, substrate temperature, and film thickness. These observations include an unexpected narrow peak found in the silicon (111) x- ray peak intensity, which occurs at a specific laser fluence for a given film thickness and substrate temperature. Amorphous silicon materials processed at laser energy densities defined by this peak exhibit exceptionally large grain sizes and electron mobilities that cannot be obtained at any other energy and shot density combination above or below the energy at which the Si (111) x-ray peak intensity maximum occurs.