Abstract
We have made critical field (Hc2) measurements on high TcNbN and VN films prepared either by reactive sputtering or by nitriding evaporated metal films at high temperature in an N2atmosphere. Good quality films were obtained having high Tcand Hc2by both methods. Thick sputtered NbN films (> 1000 A) showed H c2 ⊥ > H c2 ″ whereas thinner films had H c2 ⊥ H c2 ⊥ for thick as well as thin films. In the case of VN thick reactively sputtered films showed small anisotropy H c2 ⊥ ⪞; H c2 ″ , while H c2 ″ > H c2 ⊥ for thin sputtered films as well as for thick nitrided films. These observations show strong columnar growth in reactively sputtered NbN films and its absence in nitrided films. Transmission electron microscope pictures support this view. We have also made measurements on VN films with a small percentage of Mo included with the aim of increasing Hc2by spin-orbit scattering. Werthamer-Helfand-Hohenberg theory has been applied to the Hc2versus T data.
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