Abstract
The evolution of the CMOS device structure has been affected by not only the critical dimension (CD) but also the critical feature size (CFS). In particular, device structures have been dominated by CFS, an index of the improvement in integration at that time. We show that when the structure was changed from planar to FinFET, the thickness of the gate stack became an inevitable CFS factor in addition to the contacts, and this will be more desperate in the post-scaling generation where multiple gates are desired.
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