Abstract
We introduce an equilibrium critical Ge dose as stability criterion for strained SiGe structures, which is based on our new approach in equilibrium theory for strained layer relaxation reported in a recent paper. This critical dose concept for strained layers having a variable concentration of solute atoms in the host lattice is more appropriate to describe the condition for the occurrence of misfit dislocations than the simple criterion of a critical thickness. In addition we show how stable strained layer systems can be constructed beyond the “classical” critical thickness.
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