Critical Current Properties of FF-MOD RE123 Thin Films Sintered for Short Time

Abstract

Optimizations of sintering conditions, such as PO2 , temperature and time, and the introduction of effective pinning centers were systematically studied to improve the critical current properties of RE123 thin films prepared by fluorine-free (FF) metal organic decomposition (MOD) method. We found that epitaxial growth of Y123 in FF-MOD is extremely fast. Effects of dilute Ga doping, RE mixing, and introduction of BaHfO3 fine particles on flux pinning properties were examined. Dilute Ga doping enhanced Jc at low temperature in high magnetic field regardless of sintering conditions, while BaHfO3 precipitates improved Jc at 77 K. In addition, introduction of undoped Y123 seed layer was found to dramatically improve crystallinity of doped or RE-mixed films. Moreover, high epitaxial growth rate of RE123 was maintained for these films.