Abstract

The critical current density jC in thin TaN film single-bridge structures with different width from 60nm to 8μm has been studied in a wide temperature range from 4.2K up to TC≈10.2K. At T→TC, the jC(T) curves of all bridges are described by the temperature dependence of the Ginzburg–Landau de-paring critical current in a temperature range increasing with the decrease in width of the bridges. However the zero-temperature value of the critical current density jCexp(0) used as fitting parameter decreases monotonically with the decrease in width of the bridges below ≈1μm.

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