Abstract
Examines relationship between enhanced oxide density and Cu concentration for various thicknesses of SOI layers. It is found that the decrease in SOI layer thickness causes the decrease in critical Cu concentration for enhanced oxidation generation. Furthermore, it is found that Cu concentration close to contaminant level of current ULSI device fabrication process causes enhanced oxidation on SOI wafers with 0.1 /spl mu/m SOI layer. It is necessary to pay attention to Cu contamination on SOI wafers with 0.1 /spl mu/m SOI layer during ULSI device fabrication process.
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