Abstract
It is established that the necessary conditions for spontaneous relaxation of elastic strain energy in a copper-As60Se40 self-organizing dissipative heterostructure is that the elastic deformation energy and the temperature must reach their threshold values. It is shown that in the temperature range 270–340 K the spontaneous relaxation of elastic deformation energy is accompanied by structural-chemical ordering and anomalous diffusion of copper into the glassy chalcogenide semiconductor layer. The maximum concentration of copper dissolved in the films is 40 at. %. Conductivity inversion from p to n type is observed in doped layers obtained by this method.
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