Critical comparison of carrier lifetime at 1.55 &amp;#x00B5;m of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

M Martin,R Ares,J Mangeney,E R Brown,A Fekecs,D Morris

doi:10.1109/irmmw-thz.2012.6380277

Critical comparison of carrier lifetime at 1.55 &#x00B5;m of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

M Martin, R Ares + Show 4 more

https://doi.org/10.1109/irmmw-thz.2012.6380277

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Publication Date: Sep 1, 2012

Citations: 2

Affiliation: University of Paris-Sud, Institut Polytechnique de Paris, French National Centre for Scientific Research, Wright State University

#Two-photon Absorption Process #Time-resolved Differential Transmission + Show 8 more

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Abstract

We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured with a fiber-based 1550 nm time-resolved differential transmission (ΔT) set-up. The InGaAs-based materials show a positive ΔT with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ΔT consistent with a two-photon absorption process.

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