Abstract
Capacitance measurements on insulating uncompensated Si:As have been made to temperatures as low as 10mK from 10Hz to 1MHz. As T→0 C(ω,T) shows very little dispersion from hopping and one obtains the dielectric response ε'(N)-εh=4πχ'(N). As N→Nc-χ'(N)∝(Nc/N-1)-ζ and we obtain ζ=1.18±.08 for Nc=8.55±.05×1018/cm3, thus finding ζ=2µ where µ is the DC conductivity exponent. These agree with Si:P results and confirm universality of the exponents and the Mott criterion for n=type Si.
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