Abstract
dc conductivity measurements of barely insulating uncompensated Si:As samples yield results showing Mott variable-range-hopping behavior [ln\ensuremath{\sigma}\ensuremath{\propto}(${T}_{0}$/T)(1/4)] in the temperature range 0.15<T<10 K. The exponent (1/4) has been confirmed using the logarithmic-derivative technique. The characteristic temperature ${T}_{0}$ shows scaling behavior of the form ${T}_{0}$\ensuremath{\propto}(1-N/${N}_{c}$${)}^{p}$ with 2.3<p<2.9 for 1-N/${N}_{c}$0.07 and p\ensuremath{\simeq}8.4 for 0.11-N/${N}_{c}$0.16. Both the exponent (1/4) in the Mott law and the localization length exponent \ensuremath{\nu}=p/3 derived from the scaling of ${T}_{0}$ suggest a filling-in of the Coulomb gap and a reduced role of electron-electron interactions in the temperature range of these measurements.
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