Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H‐SiC substrates

Abstract

AbstractAlN layers have been grown on 6H‐SiC substrates at high temperatures. Single step growth of AlN did not yield high quality layers. A novel two step method involving the growth of AlN layer on already grown and relaxed AlN was found to be effective in getting better quality layers as evidenced by structural and morphological analyses. Microcracks and nano‐island surfaces of the first grown AlN acted as naturally patterned trenches and were found to help in achieving high quality AlN layers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)