Criteria for identifying radiation resistant semiconductor materials

Abstract

An index that would reliably rank the relative radiation hardness of semiconductors would be very helpful for selecting materials for many applications. The concept of "concentration of primary defects" (CPD) has been proposed as such an index. Here we show that for the GaAs-InP family of semiconductors used in solar cells, CPD yields results that do not agree with experiment. The long-established concept of damage constants for various semiconductor properties is a more reliable index. For solar cells the relevant damage constant is that for the degradation of minority carrier lifetime. Although the damage constants reported for different semiconductors are specific to a particular type and energy of radiation, we show they can be extended beyond the type and particle energy for which they were originally determined by using nonionizing energy loss (NIEL), thereby greatly extending their possible application.