Abstract
The method of low-energy electron diffraction is used to investigate surfaces of GaAs misaligned by 3° from (001) as they are heated in vacuum to a temperature of T=550 °C in the field of a temperature gradient ▽T⋍50 deg/cm. When no ▽T is present, a (1×4) structure forms at the surface, which is preserved under annealing for 1 hour. In the presence of ▽T, reflection doublets appear along the direction [110], indicating a faceted surface. Analogous behavior is observed after the crystals are annealed with no ▽T at T=650–700 °C, when the evaporation of arsenic becomes noticeable. The calculated value of the atomic heat of transport Q* of 2.3 eV is close to Q* for transition metals, where it is associated with phonon drag by the atoms.
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