Abstract
Two-dimensional electron gas (2DEG) formed at the interface between two oxide band-insulators LaAlO3 and SrTiO3 raises the possibility to develop oxide nanoelectronics. Here, we report the creation of a 2DEG at the LaAlO3/SrTiO3 heterointerfaces grown by 90° off-axis sputtering which allows uniform films over a large area. The electrical transport properties of the LaAlO3/SrTiO3 heterointerface are similar to those grown by pulsed laser deposition. We also demonstrate room-temperature conductive probe-based switching of quasi-one-dimensional structures. This work demonstrates that a scalable growth process can be used to create the two-dimensional electron gas system at oxide heterointerfaces.
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