Abstract
Si quantum wires (QWRs) suspended in SiO2 are successfully created on a V-groove patterned Si(001) substrate by using low-energy oxygen ion implantation. A single Si QWR aligned to [110] is formed near the bottom center of the V groove, which has a hexagonal cross section with {111} and {001} lateral facets. The development of Si QWRs was found to be controlled by the oxygen ion dose and the formation mechanism is attributed to an oxygen ion enrichment near the V-groove corner which arises from lateral ion straggling.
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