Creation and motion of dislocations and fracture in metal and silicon crystals

Abstract

By making a step on one surface (\(\left( {11\bar 2} \right)\)) of a rectangular small paralellepiped copper crystal, dislocations could be created by the molecular dynamic method. The dislocation created was not a complete edge dislocation but a pair of Heidenreich-Shockley partial dislocations. Each time a dislocation was created, the stress on the surface was released. Small copper crystals having a notch were pulled (until fracture), compressed and buckled by use of the molecular dynamic method. An embedded atom potential was used to represent the interaction between atoms. Dislocations were created near the tip of the notch. A very sharp yield stress was observed.The results of high speed deformations of pure silicon small crystals using the molecular dynamics are presented. The results suggest that plastic deformation may be possible for the silicon with a high speed deformation even at room temperature. Another small size single crystal, the same size and the same surfaces, was compressed using molecular dynamic method. The surfaces are {110}, {112} and {111}. The compressed direction was [111]. It was found that silicon crystals are possible to be compressed with a high speed deformation. This may suggest that silicon may be plastically deformed with high speed deformation.