Abstract
ABSTRACTIntensive research is currently underway to exploit the highly interesting properties of nano-bits (“nano-sized particles and molecules”) for optical, electronic and other applications. The basis of these unique properties is the small-size of these structures which result in quantum mechanical phenomena and interesting surface properties. The small molecules and/or nano-particles are selected in such a way so that it can create an internal electric in the nano-composite. We define a nanocomposite is an admixture of small molecules and/or nano-particles and a polymer. We have demonstrated the internal electric field in our devices, made from nano-bits (nano-particles and/or molecules) and insulating materials, can contribute to the electrical bistability i.e. two conductive states.
Highlights
Memory devices play an important role in the electronics arena and inspire advances in the technologies
Polymer memory devices based on a blend of two small organic molecules (where one is an electron acceptor (A) and the second one is an electron donor (D)) and an
We further investigate/scrutinised the model in-depth using optical (Fourier Transform Infra-Red spectroscopy (FTIR)) and electrical by deliberately creating electric dipoles in the polymer matrix using a series of electron donor (Tetrathiafulvalene (TTF), 8-hydroxyquinilone (8HQ)) and electron acceptor (tetracyanoethylene (TCNE); 7,7,8,8, tetracyanoquinodimethane (TCNQ)) small molecules, ferroelectric nano-particles (BaTiO3) in a polymer and selenium nano-particles (Se-NPs) sandwiched between two insulating (a-C:H) layers
Summary
Memory devices play an important role in the electronics arena and inspire advances in the technologies. Polymer memory devices (PDMs) are a class of memory devices, an admixture of polymer, nanoparticles and/or small organic molecules which exhibit two distinct electrical conductance states (low and respectively high) when the voltage is applied. Polymer memory devices based on a blend of two small organic molecules (where one is an electron acceptor (A) and the second one is an electron donor (D)) and an. Typical I –V behaviours of Al/PVAc+BaTiO3/Al structures are shown in Fig.-5(b) In this device, I-V scan exhibits large hysteresis for negative and positive applied voltages when compared with a polyvinyl acetate device. Memory behaviour of four different types (different donor-acceptor complexes) was investigated by recording current-voltage characteristics, as shown in Fig.-10. It is clear from Fig.-11 that the devices exhibiting distinguishable conductivity states over 4h and after that of continuous operation there was a decline in both ON and OFF state after some time, more accentuate especially of the high state
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