Abstract
AbstractBy using the seeded physical vapour transport (SPVT) method the CdS:Cr single crystals were grown. Doping concentration up to 5×1018 cm‐3 was achieved. The emission lifetime of the exited state, 5E, of Cr2+ in CdS host was measured to be 0.93 μs at room temperature and 7.3 μs at liquid nitrogen temperature. The measured values of peak absorption and emission cross sections were found to be 1.4×10‐18 and 1.1×10‐18 cm2 respectively. Tuning possibility and efficiency of pulsed Cr2+:CdS laser was described. CW laser operation with slope efficiency of 52% and output power up to 0.79 W was obtained (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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