Abstract
The high efficient laser performance of self-Q-switched laser in the co-doped Cr 4+,Nd 3+:YAG microchip with 1.8 mm thickness was demonstrated. The slope efficiency is varied with the reflectivity of output coupler at 1064 nm , and the highest slope efficiency of 26% was obtained for 95% reflectivity of output coupler at 1064 nm . The pulse width, the single pulse energy and the pulse repetition rate for different reflectivity of the output couplers were measured, and the experimental results agree with the numerical calculations of the passively Q-switched rate equations. This can lead to develop the diode laser pumped monolithic self-Q-switched solid-state microchip lasers, especially for the intracavity frequency-doubled solid-state microchip lasers.
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