Abstract
Cr\(CoPtCr,CoPt) films were deposited on oxidized Si 〈100〉 substrates via dc magnetron sputtering. Process parameters, such as deposition rates, number of bilayers, and bias voltage, were varied to achieve the hard magnetic properties without thermal processing of the films. Coercivities in the range of 2000 Oe, with corresponding squareness of about 0.8–0.9, and remanent magnetization in the range (3–3.6) memu/cm3, were achieved by identification of the optimum conditions.
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