Abstract

The adsorption of atomic hydrogen at Si(100)2 × 1 has been studied for coverages at and below one monolayer at temperatures between 300 and 1200 K using high-resolution Electron Energy Loss Spectroscopy (EELS) and Low Energy Electron Diffraction (LEED). Measurements of EELS frequencies, linewidths and intensities are discussed for different coverages and temperatures during exposure as well as subsequent annealing. Formation of a monohydride Si(100)2 × 1 : H adsorption phase is observed at room temperature in the sub-monolayer range, at 650 K for all coverages up to the saturation, and during thermal decomposition of the low temperature dihydride Si(100)1 × 1 : : 2H adsorption phase. The latter is formed by saturating Si(100) at 300 K with atomic hydrogen.

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