Abstract
AbstractGaN nanowires with vastly different morphologies depending upon their growth direction can be produced by direct nitridation and vapor transport of Ga in disassociated ammonia, report Sunkara and co‐workers on p. 216. Nanowires grown along the c‐direction develop hexagonal‐prism island morphologies, while wires grown along the a‐direction form uniform, belt‐shaped morphologies. A “ballistic” phenomenon involving the 1D transport of adatoms on the non‐polar surfaces of <0001> GaN nanowires is proposed to explain the prismatic island morphologies.
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