Abstract

The cover picture shows a vision of the large scale utilization of the bismuth vanadate photoanode in the water splitting. Bismuth vanadate, due to the appropriate valence band position and bandgap, has risen to be one of the most promising semiconductors for photoelectrochemical water splitting. The enlarged nanoporous bismuth vanadate photoanodes are prepared by chemical vapor deposition and subsequent calcination, which is facile, low‐cost and non‐toxic. The obtained photoanode with high carrier density and filling factor demonstrates excellent performance in photoelectrochemical water splitting and can be further enhanced by doping or coupling to oxygen evolution catalyst. This method paves a promising way for large‐scale production of bismuth‐based semiconductor films. More details are discussed in the article by Yang et al. on page 30–34. image

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call