Abstract
The Cover Feature shows the double-pulse electrodeposition of a CuGaS2 photovoltaic thin film on an FTO substrate. The chalcopyrite film is deposited by pulsing a −0.8 V vs. Ag/AgCl potential, depositing an impure wide bandgap ternary chalcogenide, followed by a −0.2 V Ag/AgCl potential to dissolve the CuS impurity phase. The CuGaS2 film is deposited in one step in an all-elements-contained aqueous solution, using Na2S2O3 as the sulfur source. Highly pure CuGaS2 films are deposited without copper sulfide impurities and without the need for KCN post-treatment. More information can be found in the Communication by M. A. S. Andrade Jr. et al. on page 2998 in Issue 12, 2019 (DOI: 10.1002/celc.201900316).
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