Abstract
Indium nitride is the least studied of the III-nitride though it has great potential due to its small bandgap of 0.65 eV and a small effective electron mass. InN:Mg was recently confirmed to be p-type. However, Hall measurements on InN:Mg still show n-type conductivity, even when InN:Mg is very thick. Some studies have suggested the possibility of a high coupling resistance between the surface electron accumulation and the bulk p-InN. In this study, we show through vertical and transmission-line model measurement that this coupling resistance is small and should not affect conductivity and Hall measurements.
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