Abstract
Symmetric narrow waveguide structure has been developed and fabricated to achieve low beam divergence and improved coupling performance of the 1.95 μm GaSb-based single-transverse-mode diode lasers. The near-field expansion effect of the narrowed 150 nm vertical waveguide design leads to a reduced fast-axis beam divergence of 44.2° full width at half maximum (FWHM) as well as 62% single-mode fiber (SMF) coupling efficiency, which has 55% relative promotion compared to the 40% efficiency of the conventional 270 nm waveguide design with 60.4° FWHM. The highest SMF coupling power of 113 mW was obtained by the 210 nm narrow waveguide lasers with lower internal optical loss at a 55% coupling efficiency, which performed balanced optimal performance with a narrowed divergence of 53.4° and a relatively high optical power of 206 mW. The high coupling efficiency and power will provide more promising prospects for the GaSb-based single-transverse-mode lasers in the widespread fiber-based and external-cavity applications.
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