Abstract
We present the coupling of InGaN/GaN multiquantum-wells (MQWs) photoluminescence (PL) to surface plasmons (SPs) in platinum (Pt) nanoclusters (PNCs). To tune the extinction spectrum of Pt thin film through surface modification such as PNC, the thermal annealing method was employed. From conventional PL and time-resolved PL measurements, enhanced emission and faster luminescence decay time of the PNC-formed InGaN/GaN MQWs was observed with blueshifted emission behavior near the plasmon absorption band of PNC. A Purcell enhancement factor, which was calculated to describe the increase in spontaneous emission rate (Rse), revealed an approximate 2.2 times enhancement of Rse at 425 nm. We believe that these phenomena result from efficient energy transfer in PNC-formed InGaN/GaN MQWs by SPs coupling.
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