Coupling of exciton states in superlattice and bulk GaAs optoelectronic modulators, studied by density matrix models and optical modulation spectroscopy

Abstract

The dielectric function of GaAs/AlGaAs superlattices and bulk GaAs material are studied with density matrix models and modulation spectroscopy on optoelectronic modulator devices, showing the Coulomb enhanced Wannier–Stark effect and the Coulomb enhanced Franz–Keldysh effect, respectively. The models include the Coulomb interaction for the coupled excitonic states and an applied electric field. Transfer matrix models are used to calculate the reflection or transmission spectra of the devices. The dielectric function is modulated by the electric field over the active layer, by optical pumping of the p–i–n–i structure of the superlattice device and by electrical contacts for the bulk GaAs modulator device. In both material structures the exciton dissociates or polarizes due to the applied electric field, modulating the dielectric function and reflected or transmitted light.