Abstract
This study elucidates the coupling of Schottky barriers and trapped charges involved in the source-side electrons programming and two-bit/cell reading of the Schottky barrier charge-trapping cells. Two-dimensional numerical iterations were employed to examine the distribution of electron injections and trapped charges, and to discuss the differences of physical mechanisms between the Schottky barrier and conventional cells. In the Schottky barrier cells, both the conduction and injection of electron carriers depend on the Schottky source barrier lowering. The source-side trapped charges alter the source-side lateral field distribution, reducing the maximum of the lateral electric field, and moving the subsequent injections away from the source edge. The distribution of total trapped-charges is considerably wider than that of the initial injection. However, because of source-side conduction, the excellent screening of second-bit effect is beneficial to operate the NOR-type multibit/cell charge-trapping memories.
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