Abstract
We present a theoretical study of photoluminescence from exciton states in InAs/GaAs asymmetric dot pairs, where interdot coupling is reached via magnetic field in the Faraday configuration. Electronic structure is obtained by finite element calculations, and Coulomb effects are included using a perturbative approach. According to our simulated spectra, bright excited states may become optically accessible at low temperatures in hybridization regimes where intermixing with the ground state is achieved. Our results show effective magnetic control on the energy, polarization and intensity of emitted light, and suggest these coupled nanostructures as relevant candidates for implementation of quantum optoelectronic devices.
Highlights
The development of novel devices for spintronics and quantum information processing has been a primary motivation in the development of nanostructured semiconductors in the last years
We study the photoluminescence spectrum (PL) of an asymmetric quantum dot pair (AQDP)
The presence of coupling is highly affected by the Coulomb interaction, regardless of the fact that its value is around 2 orders of magnitude smaller than the exciton energy
Summary
The development of novel devices for spintronics and quantum information processing (e.g., single-photon emitters and quantum logic gates) has been a primary motivation in the development of nanostructured semiconductors in the last years. Where Eg is the energy gap, EoBe (EoTe) is the ground state energy of the electron on the bottom (top) dot, EoBh is the ground state energy of the hole on the bottom dot (in the Hamiltonian, this energy appears in all diagonal terms because the hole does not tunnel in the studied field window)c [14], Ze (Zh) is the Zeeman splitting of electron (hole), VeB−h is the Coulomb interaction between electron and hole in the bottom dot, and te is the tunnel energy of the coupling interaction which conserves spin orientation In this Hamiltonian, the Coulomb interaction for the indirect exciton is neglected since it is at least 1 order of magnitude smaller than in the direct exciton case. N,j where Snj is the overlap between the envelope part of the electron and hole wave functions in the states |n > and |j > of the conduction and valence bands, respectively
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