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Abstract
We have investigated a possible application of single-electron transistor (SET) devices for use as a differential voltage amplifier. The device consists of a box-SET and probe-SET coupled with each other through a tunnel junction, with the gate electrodes of the two SETs acting as differential signal inputs. The voltage across the probe-SET at a fixed bias current provides information about the charge states of both the probe-SET and the box-SET, which was confirmed by simulations based on the orthodox theory of single-electron tunnelling. When operated as a differential amplifier, the output probe-SET voltage signal was measured as a function of the two gate input signals. While the output signal was found to be proportional to the difference in the two input signals, it remained unchanged for input signals of the same amplitude (referred to as the common mode signal), and the common-mode rejection ratio was found to be 27.5 dB.
Highlights
The single-electron transistor (SET) holds great promise for its potential in the generation of electronic devices because of its great advantages in low power consumption and high packing density
One of the reasons is that when used as an electrometer, SET suffers from the inevitable random charge noises present in the surroundings, which largely limits its sensing capability
Our circuit consists of a pair of coupled SETs (CSET)
Summary
The single-electron transistor (SET) holds great promise for its potential in the generation of electronic devices because of its great advantages in low power consumption and high packing density. The charge states of the junction-coupled metallic islands have been mapped out and operation of this SET differential voltage amplifier was demonstrated. To map out the charge states the probe-SET was symmetrically current-biased and the box-SET was short-circuited and grounded, as illustrated in figure 1(b).
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