Abstract
This paper presents a coupled electrothermal, electromagnetic, and physical model for microwave power field-effect transistors (FETs). The resulting model is used to investigate large gate periphery pseudomorphic high electron-mobility transistor devices. The contribution to the output power of each cell of the transistor is simulated, as well as their contribution to the heating of the device. This approach allows the investigation of the interaction between the thermal behavior, the dc bias, and the microwave circuit operating conditions. This paper reveals for the first time a more complex interaction between the thermal and microwave behavior of large-power FETs
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
