Abstract
Terahertz (THz) electrical signal generation from a photoactive semiconductor device illuminated by an optical pulse is modeled and simulated. Hydrodynamic equations in time domain are numerically solved for both electrons and holes using the discontinuous Galerkin time-domain finite element method (DGTD-FEM) for the high-frequency charge transport that occurs in the semiconductor device. The obtained frequency spectra of photocurrent in various semiconductor materials under illumination of an ultrashort light pulse are presented. The inertia effects and ballistic transport of carriers play an important role to determine the frequency response of these materials, and the developed hydrodynamic model (HDM) solver delivers a transport analysis by predicting higher and wideband frequency capabilities for GaAs and Ge detectors over Si-photodetectors.
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