Abstract
A theory describing the processes of atomic diffusion in a nonequilibrium state with nonuniform distributions of components in a defect-impurity system of silicon crystals is proposed. Based on this theory, partial diffusion models are constructed and simulation of a large number of experimental data is curried out. A comparison of the simulation results with the experiments confirms the correctness and importance of the theory developed. The book will useful for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. Practical application of the theoretical ideas formulated in the book allows finding cheaper solutions in the manufacturing of semiconductor devices and integrated microcircuits.
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